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Abstract
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Understanding magnetization dynamics in magnetic materials under external current control plays a vital role in magnetic storage devices, such as magnetoresistance random access memories and race-track memories. In this talk, we will discuss how to model such a phenomenon at different spatial and temporal scales. Consequently, a series of models is obtained with increasing accuracy. Efficient numerical methods are also proposed and applied to a couple of prototypical devices, which produces consistent results with experiments. Of physical and technological interests, 1D surrogate model is also derived using the method of matched asymptotics, which explains the Walker's breakdown. The gap between the 1D model and the original model will also be discussed.
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